7164L Series
Manufacturer: Renesas Electronics Corporation
IC SRAM 64KBIT PARALLEL 28DIP
| Part | Technology | Memory Size | Access Time | Write Cycle Time - Word | Write Cycle Time - Page | Memory Depth | Memory Width | Package Name | Voltage - Supply (Maximum) | Voltage - Supply (Minimum) | Operating Temperature (Max) | Operating Temperature (Min) | Memory Format | Package Width | Package Length | Mounting Type | Memory Type | Memory Interface (Type) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics Corporation | SRAM - Asynchronous | 8 KB | 45 ns | 45 ns | 45 ns | 8 K | 8 bit | 28-DIP 28-PDIP | 5.5 V | 4.5 V | 85 °C | -40 °C | SRAM | 7.62 mm | 0.3 in | Through Hole | Volatile | Parallel | |
Renesas Electronics Corporation | SRAM - Asynchronous | 8 KB | 20 ns | 20 ns | 20 ns | 8 K | 8 bit | 28-DIP 28-PDIP | 5.5 V | 4.5 V | 85 °C | -40 °C | SRAM | 7.62 mm | 0.3 in | Through Hole | Volatile | Parallel | |
Renesas Electronics Corporation | SRAM - Asynchronous | 8 KB | 15 ns | 15 ns | 15 ns | 8 K | 8 bit | 32-LCC | 5.5 V | 4.5 V | 125 °C | -55 °C | SRAM | 11.43 mm | 13.97 mm | Surface Mount | Volatile | Parallel | 32-CLCC |
Renesas Electronics Corporation | SRAM - Asynchronous | 8 KB | 45 ns | 45 ns | 45 ns | 8 K | 8 bit | 28-DIP 28-PDIP | 5.5 V | 4.5 V | 70 °C | 0 °C | SRAM | 7.62 mm | 0.3 in | Through Hole | Volatile | Parallel | |
Renesas Electronics Corporation | SRAM - Asynchronous | 8 KB | 15 ns | 15 ns | 15 ns | 8 K | 8 bit | 28-CDIP | 5.5 V | 4.5 V | 125 °C | -55 °C | SRAM | 7.62 mm | 0.3 in | Through Hole | Volatile | Parallel | |
Renesas Electronics Corporation | SRAM - Asynchronous | 8 KB | 20 ns | 20 ns | 20 ns | 8 K | 8 bit | 28-DIP 28-PDIP | 5.5 V | 4.5 V | 70 °C | 0 °C | SRAM | 7.62 mm | 0.3 in | Through Hole | Volatile | Parallel | |
Renesas Electronics Corporation | SRAM - Asynchronous | 8 KB | 25 ns | 25 ns | 25 ns | 8 K | 8 bit | 28-DIP 28-PDIP | 5.5 V | 4.5 V | 85 °C | -40 °C | SRAM | 7.62 mm | 0.3 in | Through Hole | Volatile | Parallel | |
Renesas Electronics Corporation | SRAM - Asynchronous | 8 KB | 35 ns | 35 ns | 35 ns | 8 K | 8 bit | 28-DIP 28-PDIP | 5.5 V | 4.5 V | 85 °C | -40 °C | SRAM | 7.62 mm | 0.3 in | Through Hole | Volatile | Parallel |