SIHB12 Series

Catalog

MOSFET N-CH 600V 12A TO263

Part	Input Capacitance (Ciss) (Max)	Technology	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package Name	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Mounting Type	Package / Case	Vgs(th) (Max)
Vishay Dale SIHB12N60ET5-GE3	937 pF	MOSFET (Metal Oxide)	58 nC 58 nC	600 V	147 W	TO-263 (D2PAK)	380 mOhm	10 V	N-Channel	-55 °C	150 °C	30 V	12 A	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V
Vishay Dale SIHB12N65E-GE3	1224 pF	MOSFET (Metal Oxide)	70 nC	650 V	156 W	TO-263 (D2PAK)	380 mOhm	10 V	N-Channel	-55 °C	150 °C	30 V	12 A	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V
Vishay Dale SIHB12N60ET1-GE3	937 pF	MOSFET (Metal Oxide)	58 nC 58 nC	600 V	147 W	TO-263 (D2PAK)	380 mOhm	10 V	N-Channel	-55 °C	150 °C	30 V	12 A	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V
Vishay Dale SIHB12N50C-E3	1375 pF	MOSFET (Metal Oxide)	48 nC 48 nC	500 V	208 W	TO-263 (D2PAK)	555 mOhm	10 V	N-Channel	-55 °C	150 °C	30 V	12 A	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	5 V