GAN FET HEMT200V18A COTS 4FSMD-B
| Part | Package / Case | Current - Continuous Drain (Id) @ 25°C | Technology | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | FET Type | Rds On (Max) @ Id, Vgs | Mounting Type | Vgs (Max) [Max] | Vgs (Max) [Min] | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
EPC Space, LLC EPC7007BC | 4-SMD, No Lead | 18 A | MOSFET (Metal Oxide) | 200 V | 2.5 V | N-Channel | 28 mOhm | Surface Mount | 6 V | -4 V | -55 °C | 150 °C | 4-SMD | 5 V | 900 pF | 7 nC |