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RES 499 OHM 3W 1% WW AXIAL

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PartCompositionTemperature CoefficientSize / Dimension [x]Size / Dimension [diameter]Size / Dimension [x]Size / Dimension [diameter]Failure RateOperating Temperature [Min]Operating Temperature [Max]Supplier Device PackagePower (Watts)Package / CaseNumber of TerminationsToleranceResistanceFeatures
Vishay General Semiconductor - Diodes Division
Wirewound
20 ppm/°C
14.22 mm
0.187 in
0.56 in
4.75 mm
R (0.01%)
-55 °C
250 °C
Axial
3 W
Axial
2
1 %
Vishay General Semiconductor - Diodes Division
Wirewound
650 ppm/°C
14.22 mm
0.187 in
0.56 in
4.75 mm
S (0.001%)
-55 °C
250 °C
Axial
3 W
Axial
2
1 %
332 mOhms
Military
Moisture Resistant
Non-Inductive
Vishay General Semiconductor - Diodes Division
Wirewound
50 ppm/°C
14.22 mm
0.187 in
0.56 in
4.75 mm
S (0.001%)
-55 °C
250 °C
Axial
3 W
Axial
2
1 %
1.05 Ohms
Vishay General Semiconductor - Diodes Division
Wirewound
20 ppm/°C
14.22 mm
0.187 in
0.56 in
4.75 mm
M (1%)
-55 °C
250 °C
Axial
3 W
Axial
2
1 %
1.27 kOhms
Vishay General Semiconductor - Diodes Division
Wirewound
20 ppm/°C
14.22 mm
0.187 in
0.56 in
4.75 mm
S (0.001%)
-55 °C
250 °C
Axial
3 W
Axial
2
1 %
1.27 kOhms
Vishay General Semiconductor - Diodes Division
Wirewound
50 ppm/°C
14.22 mm
0.187 in
0.56 in
4.75 mm
R (0.01%)
-55 °C
250 °C
Axial
3 W
Axial
2
1 %
5.11 Ohms
Vishay General Semiconductor - Diodes Division
Wirewound
20 ppm/°C
14.22 mm
0.187 in
0.56 in
4.75 mm
R (0.01%)
-55 °C
250 °C
Axial
3 W
Axial
2
1 %
1.65 kOhms
Vishay General Semiconductor - Diodes Division
Wirewound
20 ppm/°C
14.22 mm
0.187 in
0.56 in
4.75 mm
R (0.01%)
-55 °C
250 °C
Axial
3 W
Axial
2
1 %
681 Ohms
Vishay General Semiconductor - Diodes Division
Wirewound
50 ppm/°C
14.22 mm
0.187 in
0.56 in
4.75 mm
R (0.01%)
-55 °C
250 °C
Axial
3 W
Axial
2
1 %
2.61 Ohms
Vishay General Semiconductor - Diodes Division
Wirewound
20 ppm/°C
14.22 mm
0.187 in
0.56 in
4.75 mm
M (1%)
-55 °C
250 °C
Axial
3 W
Axial
2
1 %
750 Ohms