RWR89 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Catalog
RES 499 OHM 3W 1% WW AXIAL
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| Part | Composition | Temperature Coefficient | Size / Dimension [x] | Size / Dimension [diameter] | Size / Dimension [x] | Size / Dimension [diameter] | Failure Rate | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Power (Watts) | Package / Case | Number of Terminations | Tolerance | Resistance | Features |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Wirewound | 20 ppm/°C | 14.22 mm | 0.187 in | 0.56 in | 4.75 mm | R (0.01%) | -55 °C | 250 °C | Axial | 3 W | Axial | 2 | 1 % | ||
Vishay General Semiconductor - Diodes Division | Wirewound | 650 ppm/°C | 14.22 mm | 0.187 in | 0.56 in | 4.75 mm | S (0.001%) | -55 °C | 250 °C | Axial | 3 W | Axial | 2 | 1 % | 332 mOhms | Military Moisture Resistant Non-Inductive |
Vishay General Semiconductor - Diodes Division | Wirewound | 50 ppm/°C | 14.22 mm | 0.187 in | 0.56 in | 4.75 mm | S (0.001%) | -55 °C | 250 °C | Axial | 3 W | Axial | 2 | 1 % | 1.05 Ohms | |
Vishay General Semiconductor - Diodes Division | Wirewound | 20 ppm/°C | 14.22 mm | 0.187 in | 0.56 in | 4.75 mm | M (1%) | -55 °C | 250 °C | Axial | 3 W | Axial | 2 | 1 % | 1.27 kOhms | |
Vishay General Semiconductor - Diodes Division | Wirewound | 20 ppm/°C | 14.22 mm | 0.187 in | 0.56 in | 4.75 mm | S (0.001%) | -55 °C | 250 °C | Axial | 3 W | Axial | 2 | 1 % | 1.27 kOhms | |
Vishay General Semiconductor - Diodes Division | Wirewound | 50 ppm/°C | 14.22 mm | 0.187 in | 0.56 in | 4.75 mm | R (0.01%) | -55 °C | 250 °C | Axial | 3 W | Axial | 2 | 1 % | 5.11 Ohms | |
Vishay General Semiconductor - Diodes Division | Wirewound | 20 ppm/°C | 14.22 mm | 0.187 in | 0.56 in | 4.75 mm | R (0.01%) | -55 °C | 250 °C | Axial | 3 W | Axial | 2 | 1 % | 1.65 kOhms | |
Vishay General Semiconductor - Diodes Division | Wirewound | 20 ppm/°C | 14.22 mm | 0.187 in | 0.56 in | 4.75 mm | R (0.01%) | -55 °C | 250 °C | Axial | 3 W | Axial | 2 | 1 % | 681 Ohms | |
Vishay General Semiconductor - Diodes Division | Wirewound | 50 ppm/°C | 14.22 mm | 0.187 in | 0.56 in | 4.75 mm | R (0.01%) | -55 °C | 250 °C | Axial | 3 W | Axial | 2 | 1 % | 2.61 Ohms | |
Vishay General Semiconductor - Diodes Division | Wirewound | 20 ppm/°C | 14.22 mm | 0.187 in | 0.56 in | 4.75 mm | M (1%) | -55 °C | 250 °C | Axial | 3 W | Axial | 2 | 1 % | 750 Ohms |