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20 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, N-channel Trench MOSFET
20 V, N-channel Trench MOSFET
| Part | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Rds On (Max) | Vgs(th) (Max) | Drain to Source Voltage (Vdss) | Operating Temperature (Min) | Operating Temperature (Max) | Package Name | Qualification | Power Dissipation (Max) | Grade | Gate Charge (Max) | Mounting Type | Vgs (Max) | Package / Case | Technology | Current - Continuous Drain (Id) (Ta) | Input Capacitance (Ciss) (Max) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 4.5 V | 1.8 V | 65 mOhm | 1 V | 20 V | -55 °C | 150 °C | SOT-323 | AEC-Q101 | 395 mW | Automotive | 5.85 nC | Surface Mount | 8 V | SC-70 SOT-323 | MOSFET (Metal Oxide) | 2 A | 289 pF | N-Channel |
Nexperia USA Inc. | 4.5 V | 1.8 V | 65 mOhm | 1 V | 20 V | -55 °C | 150 °C | SOT-323 | 395 mW | 5.85 nC | Surface Mount | 8 V | SC-70 SOT-323 | MOSFET (Metal Oxide) | 2.2 A | 289 pF | N-Channel |