19 A, 600 V, very fast IGBT with Ultrafast diode
19 A, 600 V, very fast IGBT with Ultrafast diode
| Part | Gate Charge | Package / Case | Reverse Recovery Time (trr) | Test Condition Voltage | Test Condition Voltage (Secondary) | Test Condition Current | Test Condition Resistance | Input Type | Operating Temperature (Min) | Operating Temperature (Max) | Current - Collector (Ic) (Max) | Td (off) @ 25°C | Td (on) @ 25°C | Mounting Type | Switching Energy (On) | Switching Energy (Off) | Power - Max | Current - Collector Pulsed (Icm) | Package Name | Voltage - Collector Emitter Breakdown (Max) | Vce(on) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 53 nC | TO-247-3 | 31 ns | 390 V | 15 V | 12 A | 10 Ohm | Standard | -55 °C | 150 °C | 42 A | 97 ns | 25 ns | Through Hole | 85 µJ | 189 µJ | 140 VA | 60 A | TO-247 Long Leads | 600 V | 2.5 V |