IRF2804 Series

Catalog

POWER MOSFET, N CHANNEL, 40 V, 280 A, 0.0023 OHM, TO-220AB, THROUGH HOLE

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IRF2804PBF	240 nC	300 W	-55 °C	175 ░C	Through Hole	75 A	20 V	N-Channel	10 V	40 V	6450 pF	4 V	TO-220AB	MOSFET (Metal Oxide)	TO-220-3
Infineon Technologies IRF2804STRRPBF	240 nC	300 W	-55 °C	175 ░C	Surface Mount	75 A	20 V	N-Channel	10 V	40 V	6450 pF	4 V	D2PAK	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2 mOhm
Infineon Technologies IRF2804STRLPBF	240 nC	300 W	-55 °C	175 ░C	Surface Mount	75 A	20 V	N-Channel	10 V	40 V	6450 pF	4 V	D2PAK	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2 mOhm
Infineon Technologies IRF2804STRL7PP			-55 °C	175 ░C	Surface Mount	160 A	20 V	N-Channel	10 V	40 V		4 V	D2PAK (7-Lead)	MOSFET (Metal Oxide)	D2PAK TO-263-7 TO-263CB	1.6 mOhm	330 W	6930 pF	260 nC