MOSFET N-CH 40V 120A TO263
| Part | Power Dissipation (Max) [Max] | Vgs (Max) | Package / Case | Technology | FET Type | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 375 W | 20 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | N-Channel | 285 nC | -55 °C | 175 ░C | 4.5 V 10 V | Surface Mount | 2.5 V | 17 mOhm | 11685 pF | TO-263 (D2PAK) | 120 A | 40 V |