IXYP20N120B4 Series

IGBT DISCRETE TO-220

Catalog

IGBT DISCRETE TO-220

Part	Current - Collector Pulsed (Icm)	Td (off) @ 25°C	Td (on) @ 25°C	Mounting Type	Package / Case	Package Name	Current - Collector (Ic) (Max)	Switching Energy (Off)	Switching Energy (On)	Operating Temperature (Min)	Operating Temperature (Max)	Power - Max	Vce(on) (Max)	Voltage - Collector Emitter Breakdown (Max)	Reverse Recovery Time (trr)	Input Type	Gate Charge	Test Condition Current	Test Condition Voltage	Test Condition Voltage (Secondary)	Test Condition Resistance
LITTELFUSE IXYP20N120B4	130 A	200 ns	15 ns	Through Hole	TO-220-3	TO-220 (IXYP)	76 A	1.6 mJ	3.9 mJ	-55 °C	175 °C	375 W	2.1 V	1200 V	47 ns	Standard	44 nC	20 A	960 V	15 V	10 Ohm

Catalog

IGBT DISCRETE TO-220

Description

Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel. Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low gate drive requirements