Beta
⌘K
SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN III SERIES, SINGLE, 600 V, 12 A, 19 NC, TO-220
| Part | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Mounting Type | Current - Reverse Leakage @ Vr | Technology | Current - Average Rectified (Io) | Supplier Device Package | Speed | Capacitance @ Vr, F | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 0 ns | 600 V | 2.1 V | 175 ░C | -55 C | Through Hole | 100 µA | SiC (Silicon Carbide) Schottky | 12 A | PG-TO220-2-1 | No Recovery Time | 310 pF | TO-220-2 |