Beta
⌘K
IR MOSFET™ N-CHANNEL ; TO-220 PACKAGE; 2.4 MOHM;
| Part | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Supplier Device Package | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Vgs (Max) | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | N-Channel | MOSFET (Metal Oxide) | 75 A | 4 V | TO-220AB | 2.4 mOhm | 290 W | 20 V | TO-220-3 | 240 nC | -55 °C | 175 ░C | Through Hole | 10 V | 30 V | 6320 pF |