DIODE GEN PURP 800V 3A DO214AB
| Part | Current - Reverse Leakage @ Vr | Reverse Recovery Time (trr) | Speed | Package / Case | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Supplier Device Package | Technology | Mounting Type | Current - Average Rectified (Io) | Voltage - DC Reverse (Vr) (Max) [Max] | Supplier Device Package | Capacitance @ Vr, F | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 10 µA | 500 ns | 200 mA 500 ns | DO-214AB SMC | 150 °C | -55 °C | DO-214AB (SMC) | Standard | Surface Mount | 3 A | 800 V | |||
Taiwan Semiconductor Corporation | 5 µA | 500 ns | 200 mA 500 ns | DO-214AA SMB | 150 °C | -55 °C | DO-214AA | Standard | Surface Mount | 3 A | 800 V | SMB | 50 pF | 1.3 V |