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DIODE SIL CARB 600V 12A TO252-3
| Part | Mounting Type | Voltage - Forward (Vf) (Max) @ If | Package / Case | Supplier Device Package | Technology | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Speed | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - DC Reverse (Vr) (Max) [Max] | Reverse Recovery Time (trr) | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Surface Mount | 2.1 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | PG-TO252-3 | SiC (Silicon Carbide) Schottky | 100 µA | 310 pF | No Recovery Time | 175 ░C | -55 C | 600 V | 0 ns | 12 A |