DIODE GEN PURP 600V 10A DIE
| Part | Current - Reverse Leakage @ Vr | Speed | Speed | Technology | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If | Mounting Type | Current - Average Rectified (Io) | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 27 µA | Standard Recovery >500ns | 200 mA | Standard | 600 V | 1.25 V | Surface Mount | 10 A | 150 °C | -55 °C | Die | Die |
Infineon Technologies | 27 µA | Standard Recovery >500ns | 200 mA | Standard | 600 V | 1.6 V | Surface Mount | 15 A | 175 ░C | -40 °C | Die | Die |
Infineon Technologies | 27 µA | Standard Recovery >500ns | 200 mA | Standard | 600 V | 1.25 V | Surface Mount | 10 A | 150 °C | -55 °C | Die | Die |
Infineon Technologies | 27 µA | Standard Recovery >500ns | 200 mA | Standard | 600 V | 1.6 V | Surface Mount | 15 A | 175 ░C | -40 °C | Die | Die |
Infineon Technologies | 27 µA | Standard Recovery >500ns | 200 mA | Standard | 600 V | 1.25 V | Surface Mount | 10 A | 150 °C | -55 °C | Die | Die |