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MOSFET N-CH 650V 10.1A TO220
| Part | FET Type | Operating Temperature [Max] | Operating Temperature [Min] | Vgs (Max) | Technology | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Package / Case | Rds On (Max) @ Id, Vgs | Mounting Type | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | N-Channel | 150 °C | -40 °C | 20 V | MOSFET (Metal Oxide) | 28 W | 440 pF | 10.1 A | TO-220-3 Full Pack | 650 mOhm | Through Hole | 650 V | 3.5 V | 23 nC | PG-TO220-FP | 10 V |