MOSFET, P-CH, 55V, 11A, TO-252AA ROHS COMPLIANT: YES
| Part | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Package / Case | Supplier Device Package | Vgs(th) (Max) @ Id | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 11 A | 19 nC | P-Channel | 55 V | 10 V | 38 W | Surface Mount | -55 °C | 150 °C | MOSFET (Metal Oxide) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | TO-252AA (DPAK) | 4 V | 20 V | 350 pF | 175 mOhm |
Infineon Technologies | 11 A | 19 nC | P-Channel | 55 V | 10 V | 38 W | Surface Mount | -55 °C | 150 °C | MOSFET (Metal Oxide) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | TO-252AA (DPAK) | 4 V | 20 V | 350 pF | 175 mOhm |
Infineon Technologies | 11 A | 19 nC | P-Channel | 55 V | 10 V | 38 W | Surface Mount | -55 °C | 150 °C | MOSFET (Metal Oxide) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | TO-252AA (DPAK) | 4 V | 20 V | 350 pF | 175 mOhm |