Catalog
40 A, 600 V, fast IGBT with UltraFAST diode
Description
AI
This device uses the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior.
Beta
⌘K
40 A, 600 V, fast IGBT with UltraFAST diode
40 A, 600 V, fast IGBT with UltraFAST diode
| Part | Package / Case | Package Name | Current - Collector (Ic) (Max) | Power - Max | Mounting Type | Vce(on) (Max) | Reverse Recovery Time (trr) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector Pulsed (Icm) | Td (on) @ 25°C | Td (off) @ 25°C | Gate Charge | Switching Energy (Off) | Switching Energy (On) | Operating Temperature (Min) | Operating Temperature (Max) | Input Type | Test Condition Voltage | Test Condition Current | Test Condition Resistance | Test Condition Voltage (Secondary) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | TO-247-3 | TO-247-3 | 80 A | 250 VA | Through Hole | 2.5 V | 44 ns | 600 V | 150 A | 31 ns | 100 ns | 100 nC | 330 µJ | 220 µJ | -55 °C | 150 °C | Standard | 390 V | 20 A | 3.3 Ohm | 15 V |