IC GATE DRVR HALF-BRIDGE 8SOIC
| Part | Number of Drivers | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Logic Voltage - VIL, VIH | Input Type | Mounting Type | Package / Case | Package / Case [y] | Package / Case [x] | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) [Max] | Voltage - Supply [Max] | Voltage - Supply [Min] | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Driven Configuration | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2 | 50 ns | 100 ns | 0.8 V 3 V | Non-Inverting | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 8-SOIC | 150 °C | -40 °C | Synchronous | IGBT N-Channel MOSFET | 600 V | 20 V | 10 VDC | 360 mA | 210 mA | Half-Bridge | ||
Infineon Technologies | 2 | 50 ns | 100 ns | 0.8 V 3 V | Non-Inverting | Through Hole | 8-DIP | 8-PDIP | 150 °C | -40 °C | Synchronous | IGBT N-Channel MOSFET | 600 V | 20 V | 10 VDC | 360 mA | 210 mA | Half-Bridge | 0.3 in | 7.62 mm | ||
Infineon Technologies | 2 | 50 ns | 100 ns | 0.8 V 3 V | Non-Inverting | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 8-SOIC | 150 °C | -40 °C | Synchronous | IGBT N-Channel MOSFET | 600 V | 20 V | 10 VDC | 360 mA | 210 mA | Half-Bridge |