N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET
| Part | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Mounting Type | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | X1-WLB0808-4 | 2.7 A | 8 V | 908 pF | 5 V | Surface Mount | 4-XFBGA WLBGA | 1.2 V 4.5 V | 700 mV | 42 mOhm | 740 mW | 15 nC | -55 °C | 150 °C | N-Channel | MOSFET (Metal Oxide) |