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N-Channel MOSFET
| Part | Technology | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Supplier Device Package | FET Feature | Package / Case | Package / Case [y] | Package / Case [x] | Configuration | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Power - Max [Max] | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | MOSFET (Metal Oxide) | 1149 pF | -55 °C | 150 °C | 16 mOhm | 9.5 A | 20 V | 8-SO | Logic Level Gate | 8-SOIC | 3.9 mm | 0.154 in | 2 N-Channel (Dual) | 1.5 V | 26 nC | 1.28 W | Surface Mount |