SST39VF6401B Series

64Mb 2.7-3.6V Parallel Flash

Catalog

64Mb 2.7-3.6V Parallel Flash

Part	Technology	Write Cycle Time - Word, Page	Access Time	Memory Size	Mounting Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Package / Case	Package / Case [y]	Package / Case [y]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Memory Organization	Memory Interface	Memory Type	Memory Format
Microchip Technology SST39VF6401B-70-4I-EKE-T	FLASH	10 µs	70 ns	64 Gbit	Surface Mount	2.7 V	3.6 V	48-TFSOP	18.4 mm	0.724 in	85 °C	-40 °C	48-TSOP	4M x 16	Parallel	Non-Volatile	FLASH
Microchip Technology SST39VF6401B-70-4C-EKE-T	FLASH	10 µs	70 ns	64 Gbit	Surface Mount	2.7 V	3.6 V	48-TFSOP	18.4 mm	0.724 in	70 °C	0 °C	48-TSOP	4M x 16	Parallel	Non-Volatile	FLASH
Microchip Technology SST39VF6401B-70-4C-EKE	FLASH	10 µs	70 ns	64 Gbit	Surface Mount	2.7 V	3.6 V	48-TFSOP	18.4 mm	0.724 in	70 °C	0 °C	48-TSOP	4M x 16	Parallel	Non-Volatile	FLASH

Catalog

64Mb 2.7-3.6V Parallel Flash

Key Features

- Organized as 4M x16

- Single Voltage Read and Write Operations

• – 2.7-3.6V

- Superior Reliability

• – Endurance: 100,000 Cycles (Typical)

• – Greater than 100 years Data Retention

- Low Power Consumption (typical values at 5 MHz)

• – Active Current: 9 mA (typical)

• – Standby Current: 3 µA (typical)

• – Auto Low Power Mode: 3 µA (typical)

- Hardware Block-Protection/WP# Input Pin

• – Top Block-Protection (top 32 KWord)

• for SST39VF6402B

• – Bottom Block-Protection (bottom 32 KWord)

• for SST39VF6401B

- Sector-Erase Capability

• – Uniform 2 KWord sectors

- Block-Erase Capability

• – Uniform 32 KWord blocks

- Chip-Erase Capability

- Erase-Suspend/Erase-Resume Capabilities

- Hardware Reset Pin (RST#)

- Security-ID Feature

• – SST: 128 bits; User: 128 bits

- Fast Read Access Time:

• – 70 ns

• – 90 ns

- Latched Address and Data

- Fast Erase and Word-Program:

• – Sector-Erase Time: 18 ms (typical)

• – Block-Erase Time: 18 ms (typical)

• – Chip-Erase Time: 40 ms (typical)

• – Word-Program Time: 7 µs (typical)

- Automatic Write Timing

• – Internal VPP Generation

- End-of-Write Detection

• – Toggle Bits

• – Data# Polling

- CMOS I/O Compatibility

- JEDEC Standard

• – Flash EEPROM Pin Assignments

• – Software command sequence compatibility

- Address format is 11 bits, A10-A0

- Block-Erase 6th Bus Write Cycle is 30H

- Sector-Erase 6th Bus Write Cycle is 50H

- Packages Available– 48-lead TSOP (12mm x 20mm)

- All non-Pb (lead-free) devices are RoHS compliant

Description

The SST39VF6401B device is a 4M x16, CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF6401B writes (Program or Erase) with a 2.7-3.6V power supply. This devices conforms to JEDEC standard pinouts for x16 memories and is command set compatible with Flash devices that support the AMD/Spansion command set, enabling customers to save time and resources in implementation.