DMWSH120H28SM3 Series

1200V N-Channel Silicon Carbide Power MOSFET

Catalog

1200V N-Channel Silicon Carbide Power MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Package / Case	Vgs (Max) [Min]	Vgs (Max) [Max]	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs
Diodes Inc DMWSH120H28SM3	3905 pF	N-Channel	175 nC	15 V	97.4 A	1200 V	SiC (Silicon Carbide Junction Transistor)	TO-247-3	-8 V	19 V	Through Hole	3.6 V	TO-247	-55 °C	175 ░C	28.5 mOhm

Catalog

1200V N-Channel Silicon Carbide Power MOSFET

Key Features

• Low On-Resistance

• High BVDSSRating for Power Application

• Low Input Capacitance

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• An automotive-compliant part is available under separate datasheet (DMWSH120H28SM3Q)

Description

This SiC MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.