IC GATE DRVR HIGH-SIDE 8SOIC
| Part | Number of Drivers | Gate Type | Driven Configuration | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Voltage - Supply [Max] | Voltage - Supply [Min] | High Side Voltage - Max (Bootstrap) [Max] | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Supplier Device Package | Grade | Input Type | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Channel Type | Package / Case | Package / Case [y] | Package / Case [x] | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 1 | IGBT N-Channel MOSFET | High-Side | -55 °C | 150 °C | Surface Mount | 20 V | 10 VDC | 600 V | 80 ns | 80 ns | 8-SOIC | Automotive | Non-Inverting | 500 mA | 500 mA | Single | 8-SOIC | 3.9 mm | 0.154 in | AEC-Q100 |
Infineon Technologies | 1 | IGBT N-Channel MOSFET | High-Side | -55 °C | 150 °C | Surface Mount | 20 V | 10 VDC | 600 V | 80 ns | 80 ns | 8-SOIC | Automotive | Non-Inverting | 500 mA | 500 mA | Single | 8-SOIC | 3.9 mm | 0.154 in | AEC-Q100 |