N-CHANNEL SMALL SIGNAL MOSFET 60 V ; SOT-223 PACKAGE; 120 MOHM;
| Part | Power Dissipation (Max) | Grade | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Qualification | Vgs(th) (Max) @ Id | Technology | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 1.8 W | Automotive | -55 °C | 150 °C | 20 V | 12 nC | TO-261-4 TO-261AA | AEC-Q101 | 4 V | MOSFET (Metal Oxide) | 2.9 A | PG-SOT223-4 | 60 V | 10 V | 120 mOhm | Surface Mount | 340 pF | N-Channel |