MASTERGAN5 Series

High power density 600 V half-bridge driver with two enhancement mode GaN power HEMTs

Catalog

High power density 600 V half-bridge driver with two enhancement mode GaN power HEMTs

Part	Voltage - Load [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Current - Peak Output	Rds On (Typ)	Mounting Type	Load Type	Fault Protection	Voltage - Supply [Min]	Voltage - Supply [Max]	Supplier Device Package	Interface	Current - Output / Channel	Applications	Technology
STMicroelectronics MASTERGAN5TR	600 V	31-VQFN Exposed Pad	-40 °C	125 ¯C	7 A	77 Ohm	Surface Mount	Capacitive Inductive	Over Temperature UVLO	3.3 V	15 V	31-QFN (9x9)	Logic	4 A	DC-DC Converters	DMOS

Catalog

High power density 600 V half-bridge driver with two enhancement mode GaN power HEMTs

Key Features

• 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors:

- QFN 9 x 9 x 1 mm package

- RDS(ON)= 450 mΩ

- IDS(MAX)= 4 A

Description

The MASTERGAN5 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN power transistors in half bridge configuration. The integrated power GaNs have 650 V drain-source blocking voltage and RDS(ON)of 450 mΩ, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode. The MASTERGAN5 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The extended range of the input pins allows easy interfacing with microcontrollers, DSP units or Hall effect sensors. The MASTERGAN5 operates in the industrial temperature range, -40°C to 125°C. The device is available in a compact 9x9 mm QFN package.