Beta
⌘K
IR MOSFET™ P-CHANNEL POWER MOSFET ; DPAK TO-252 PACKAGE; 205 MOHM;
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | FET Type | Rds On (Max) @ Id, Vgs | Supplier Device Package | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Vgs (Max) | Vgs(th) (Max) @ Id | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 58 nC | DPAK (2 Leads + Tab) SC-63 TO-252-3 | P-Channel | 205 mOhm | TO-252AA (DPAK) | Surface Mount | -55 °C | 150 °C | 66 W | 20 V | 4 V | MOSFET (Metal Oxide) | 100 V | 13 A | 10 V |
Infineon Technologies | 58 nC | DPAK (2 Leads + Tab) SC-63 TO-252-3 | P-Channel | 205 mOhm | TO-252AA (DPAK) | Surface Mount | -55 °C | 150 °C | 66 W | 20 V | 4 V | MOSFET (Metal Oxide) | 100 V | 13 A | 10 V |