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MOSFET N-CH 600V 30A TO3P
| Part | Power Dissipation (Max) | Mounting Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | FET Type | Technology | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Drain to Source Voltage (Vdss) | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 500 W | Through Hole | 155 mOhm | 4.5 V | N-Channel | MOSFET (Metal Oxide) | 10 V | TO-3P | 600 V | SC-65-3 TO-3P-3 | 56 nC | 2270 pF | 30 A | 30 V | -55 °C | 150 °C |