Beta
⌘K
POWER MOSFET, P CHANNEL, 60 V, 1.9 A, 0.21 OHM, SOT-223, SURFACE MOUNT
| Part | Technology | Drain to Source Voltage (Vdss) | Mounting Type | Package / Case | Gate Charge (Qg) (Max) @ Vgs [x] | Supplier Device Package | Power Dissipation (Max) | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET (Metal Oxide) | 60 V | Surface Mount | TO-261-4 TO-261AA | 20 nC | PG-SOT223-4 | 1.8 W | P-Channel | 4.5 V 10 V | -55 °C | 150 °C | 300 mOhm | 460 pF | 20 V | 1.9 A | 2 V |