IRF99 Series

Catalog

MOSFET 2N-CH 20V 10A/12A 8SO

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Package / Case [y]	Package / Case [x]	Power - Max [Max]	Drain to Source Voltage (Vdss)	Configuration	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Feature	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IRF9910TR	Surface Mount	-55 °C	150 °C	10 A 12 A	8-SO	8-SOIC	3.9 mm	0.154 in	2 W	20 V	2 N-Channel (Dual)	13.4 mOhm	11 nC	Logic Level Gate	2.55 V	MOSFET (Metal Oxide)
Infineon Technologies IRF9910TRPBF-1	Surface Mount	-55 °C	150 °C	10 A 12 A	8-SOIC	8-SOIC	3.9 mm	0.154 in	2 W	20 V	2 N-Channel (Dual)	9.3 mOhm 13.4 mOhm			2.55 V	MOSFET (Metal Oxide)	23 nC	11 nC
Infineon Technologies IRF9910TRPBF	Surface Mount	-55 °C	150 °C	10 A 12 A	8-SO	8-SOIC	3.9 mm	0.154 in	2 W	20 V	2 N-Channel (Dual)	9.3 mOhm	11 nC	Logic Level Gate	2.55 V	MOSFET (Metal Oxide)
Infineon Technologies IRF9910PBF	Surface Mount	-55 °C	150 °C	10 A 12 A	8-SO	8-SOIC	3.9 mm	0.154 in	2 W	20 V	2 N-Channel (Dual)	13.4 mOhm	11 nC	Logic Level Gate	2.55 V	MOSFET (Metal Oxide)