DMG1026UVQ Series

Dual N-Channel Enhancement Mode MOSFET

Catalog

Dual N-Channel Enhancement Mode MOSFET

Part	Grade	Gate Charge (Qg) (Max) @ Vgs	Configuration	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	FET Feature	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Mounting Type	Qualification	Drain to Source Voltage (Vdss)	Power - Max [Max]
Diodes Inc DMG1026UVQ-7	Automotive	0.45 pC	2 N-Channel (Dual)	SOT-563	1.8 Ohm	1.8 V	Logic Level Gate	440 mA	MOSFET (Metal Oxide)	-55 °C	150 °C	32 pF	SOT-563 SOT-666	Surface Mount	AEC-Q101	60 V	650 mW
Diodes Inc DMG1026UV-7		0.45 nC	2 N-Channel (Dual)	SOT-563	1.8 Ohm	1.8 V	Logic Level Gate	410 mA	MOSFET (Metal Oxide)	-55 °C	150 °C	32 pF	SOT-563 SOT-666	Surface Mount		60 V	580 mW

Catalog

Dual N-Channel Enhancement Mode MOSFET

Key Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DMG1026UVQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.