Beta
⌘K
IR MOSFET™ N-CHANNEL POWER MOSFET ; DPAK TO-252 PACKAGE; 3 MOHM;
| Part | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Drain to Source Voltage (Vdss) | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2.5 W 42 W | 3 Ohm | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 19 nC | Surface Mount | 500 V | 20 V | 2.4 A | -55 °C | 150 °C | MOSFET (Metal Oxide) | 360 pF | TO-252AA (DPAK) | 10 V | 4 V | N-Channel |