Beta
⌘K
IR MOSFET™ N-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 13.8 MOHM;
| Part | Package / Case | Package / Case [y] | Package / Case [x] | FET Type | Technology | Vgs(th) (Max) @ Id | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 8-SOIC | 3.9 mm | 0.154 in | N-Channel | MOSFET (Metal Oxide) | 2.25 V | 20 V | 11 A | -55 °C | 150 °C | Surface Mount | 770 pF | 30 V | 13.8 mOhm | 4.5 V 10 V | 2.5 W | 11 nC | 8-SO |