IR MOSFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ L PACKAGE; 2.3 MOHM;
| Part | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25░C | FET Type | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id [Max] | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Package / Case | Vgs (Max) | Power Dissipation (Max) | Supplier Device Package | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 10 V | 26 A 375 A | N-Channel | Surface Mount | 12222 pF | 300 nC | 175 ░C | -55 °C | 4 V | 2.3 mOhm | 75 V | DirectFET™ Isometric L8 | 20 V | 3.3 W 125 W | DirectFET™ Isometric L8 | MOSFET (Metal Oxide) |