DRAM, HYPERRAM, 512 MBIT, 64M X 8BIT, 200 MHZ, FBGA, 24 PINS
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Access Time | Technology | Memory Organization | Memory Interface | Package / Case | Write Cycle Time - Word, Page | Supplier Device Package | Memory Size | Clock Frequency | Memory Format | Memory Type | Voltage - Supply [Min] | Voltage - Supply [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 105 °C | -40 °C | Surface Mount | 35 ns | PSRAM (Pseudo SRAM) | 64 M | HyperBus | 24-VBGA | 35 ns | 24-FBGA (6x8) | 64 MB | 200 MHz | PSRAM | Volatile | 1.7 V | 2 V |
Infineon Technologies | 85 °C | -40 °C | Surface Mount | 35 ns | PSRAM (Pseudo SRAM) | 64 M | HyperBus | 24-VBGA | 35 ns | 24-FBGA (6x8) | 64 MB | 200 MHz | PSRAM | Volatile | 1.7 V | 2 V |
Infineon Technologies | 85 °C | -40 °C | Surface Mount | 35 ns | PSRAM (Pseudo SRAM) | 64 M | HyperBus | 24-VBGA | 35 ns | 24-FBGA (6x8) | 64 MB | 200 MHz | PSRAM | Volatile | 1.7 V | 2 V |
Infineon Technologies | 125 °C | -40 °C | Surface Mount | 35 ns | PSRAM (Pseudo SRAM) | 64 M | HyperBus | 24-VBGA | 35 ns | 24-FBGA (6x8) | 64 MB | 200 MHz | PSRAM | Volatile | 1.7 V | 2 V |
Infineon Technologies | 105 °C | -40 °C | Surface Mount | 35 ns | PSRAM (Pseudo SRAM) | 64 M | HyperBus | 24-VBGA | 35 ns | 24-FBGA (6x8) | 64 MB | 200 MHz | PSRAM | Volatile | 1.7 V | 2 V |
Infineon Technologies | 125 °C | -40 °C | Surface Mount | 35 ns | PSRAM (Pseudo SRAM) | 64 M | HyperBus | 24-VBGA | 35 ns | 24-FBGA (6x8) | 64 MB | 200 MHz | PSRAM | Volatile | 1.7 V | 2 V |
Infineon Technologies | 85 °C | -40 °C | Surface Mount | 35 ns | PSRAM (Pseudo SRAM) | 64 M | HyperBus | 24-VBGA | 35 ns | 24-FBGA (6x8) | 64 MB | 200 MHz | PSRAM | Volatile | 1.7 V | 2 V |
Infineon Technologies | 85 °C | -40 °C | Surface Mount | 35 ns | PSRAM (Pseudo SRAM) | 64 M | HyperBus | 24-VBGA | 35 ns | 24-FBGA (6x8) | 64 MB | 200 MHz | PSRAM | Volatile | 1.7 V | 2 V |