IR MOSFET™ P-CHANNEL SMALL POWER ; SOT-23 PACKAGE; 98 MOHM;
| Part | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Technology | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Mounting Type | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 98 mOhm | 14 nC | 4.5 V 10 V | MOSFET (Metal Oxide) | 2.5 V | 30 V | 20 V | 3 A | P-Channel | -55 °C | 150 °C | Micro3™/SOT-23 | 510 pF | SC-59 SOT-23-3 TO-236-3 | Surface Mount | 1.25 W |