IC RAM 1MBIT PARALLEL 44TSOP2
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Voltage - Supply [Max] | Voltage - Supply [Min] | Memory Interface | Memory Size | Write Cycle Time - Word, Page | Technology | Package / Case | Package / Case | Package / Case | Memory Type | Supplier Device Package | Memory Organization [custom] | Memory Organization [custom] | Memory Format | Access Time | Mounting Type | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Everspin Technologies Inc.  | 105 °C  | -40 °C  | 3.6 V  | 3 V  | Parallel  | 1 Mbit  | 35 ns  | MRAM (Magnetoresistive RAM)  | 10.16 mm  | 10.16 mm  | 44-TSOP  | Non-Volatile  | 44-TSOP2  | 64 K  | 16 bits  | RAM  | 35 ns  | Surface Mount  | 
Everspin Technologies Inc.  | 105 °C  | -40 °C  | 3.6 V  | 3 V  | Parallel  | 1 Mbit  | 35 ns  | MRAM (Magnetoresistive RAM)  | 48-LFBGA  | Non-Volatile  | 48-FBGA (8x8)  | 64 K  | 16 bits  | RAM  | 35 ns  | Surface Mount  | ||
Everspin Technologies Inc.  | 70 °C  | 0 °C  | 3.6 V  | 3 V  | Parallel  | 1 Mbit  | 35 ns  | MRAM (Magnetoresistive RAM)  | 48-LFBGA  | Non-Volatile  | 48-FBGA (8x8)  | 64 K  | 16 bits  | RAM  | 35 ns  | Surface Mount  | ||
Everspin Technologies Inc.  | 125 °C  | -40 °C  | 3.6 V  | 3 V  | Parallel  | 1 Mbit  | 35 ns  | MRAM (Magnetoresistive RAM)  | 10.16 mm  | 10.16 mm  | 44-TSOP  | Non-Volatile  | 44-TSOP2  | 64 K  | 16 bits  | RAM  | 35 ns  | Surface Mount  | 
Everspin Technologies Inc.  | 105 °C  | -40 °C  | 3.6 V  | 3 V  | Parallel  | 1 Mbit  | 35 ns  | MRAM (Magnetoresistive RAM)  | 10.16 mm  | 10.16 mm  | 44-TSOP  | Non-Volatile  | 44-TSOP2  | 64 K  | 16 bits  | RAM  | 35 ns  | Surface Mount  |