POWER MOSFET, N CHANNEL, 650 V, 20.7 A, 0.16 OHM, TO-220FP, THROUGH HOLE
| Part | Vgs (Max) | FET Type | Mounting Type | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Package / Case | Technology | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs [Max] | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 20 V | N-Channel | Through Hole | 34.5 W | -55 °C | 150 °C | 2400 pF | 3.9 V | 20.7 A | TO-220-3 Full Pack | MOSFET (Metal Oxide) | 10 V | 114 nC | 190 mOhm | 600 V |