IR MOSFET™ P-CHANNEL ; DPAK TO-252 PACKAGE; 110 MOHM;
| Part | Supplier Device Package | Rds On (Max) @ Id, Vgs | Vgs (Max) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Technology | Vgs(th) (Max) @ Id | FET Type | Package / Case | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | TO-252AA (DPAK) | 110 mOhm | 20 V | Surface Mount | 32 nC | 10 V | 18 A | MOSFET (Metal Oxide) | 4 V | P-Channel | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 55 V | 650 pF | -55 °C | 150 °C | 57 W |