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30 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Rds On (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) (Ta) | Gate Charge (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Operating Temperature (Min) | Operating Temperature (Max) | Technology | Vgs(th) (Max) | Vgs (Max) | Package / Case | Input Capacitance (Ciss) (Max) | Mounting Type | Power Dissipation (Max) | Package Name | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 460 mOhm | 30 V | 900 mA | 0.93 nC | 4.5 V | 1.5 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 950 mV | 8 V | 3-XFDFN | 4540 pF | Surface Mount | 2.23 W 360 mW | DFN0606-3 | N-Channel |