DMN2451UFB4Q Series

N-Channel Enhancement Mode MOSFET

Catalog

N-Channel Enhancement Mode MOSFET

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Qualification	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Package / Case	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Grade
Diodes Inc DMN2451UFB4Q-7R	20 V	1.8 V 4.5 V	Surface Mount	6.4 nC	AEC-Q101	400 mOhm	660 mW	3-XFDFN	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	1 V	1.3 A	12 V	32 pF	Automotive
Diodes Inc DMN2451UFB4Q-7B	20 V	1.8 V 4.5 V	Surface Mount	6.4 nC	AEC-Q101	400 mOhm	660 mW	3-XFDFN	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	1 V	1.3 A	12 V	32 pF	Automotive

Catalog

N-Channel Enhancement Mode MOSFET

Key Features

• Footprint of just 0.6mm2 – Thirteen Times Smaller than SOT23

• 0.4mm Profile – Ideal for Low Profile Applications

• Low Gate Threshold Voltage

• Fast Switching Speed

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• The DMN2451UFB4Q is suitable for automotive applicationsrequiring specific change control; this part is AEC-Q101qualified, PPAP capable, and manufactured in IATF 16949certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.