DMTH8012LPSQ Series

80V 175°C N-Channel Enhancement Mode MOSFET

Catalog

80V 175°C N-Channel Enhancement Mode MOSFET

Part	Qualification	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	Power Dissipation (Max)	FET Type	Grade	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Drain to Source Voltage (Vdss)
Diodes Inc DMTH8012LPSQ-13	AEC-Q101	PowerDI5060-8	10 A 72 A	8-PowerTDFN	MOSFET (Metal Oxide)	2.6 W 136 W	N-Channel	Automotive	4.5 V 10 V	-55 °C	175 ░C	20 V	46.8 nC	2051 pF	3 V	17 mOhm	Surface Mount	80 V

Catalog

80V 175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• High Conversion Efficiency

• Low RDS(ON)– Minimizes On-State Losses

• Low Input Capacitance

• Fast Switching Speed

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DMTH8012LPSQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: synchronous rectifiers, backlighting, power-management functions, and DC-DC converters.