IR MOSFET™ N-CHANNEL POWER MOSFET ; I2PAK TO-262 PACKAGE; 9 MOHM;
| Part | Power Dissipation (Max) [Max] | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | FET Type | Mounting Type | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 230 W | 97 A | 4820 pF | 10 V | MOSFET (Metal Oxide) | -55 °C | 175 ░C | I2PAK TO-262-3 Long Leads TO-262AA | N-Channel | Through Hole | 9 mOhm | 100 V | 4 V | 120 nC | TO-262 | 20 V |