MOSFET N-CH 150V 99A D2PAK
| Part | Vgs (Max) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Rds On (Max) @ Id, Vgs | FET Type | Technology | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 20 V | 150 V | 5 V | -55 °C | 175 ░C | 120 nC | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 99 A | Surface Mount | 12.1 mOhm | N-Channel | MOSFET (Metal Oxide) | 5270 pF | D2PAK | 375 W | 10 V | |
Infineon Technologies | 20 V | 150 V | 5 V | -55 °C | 175 ░C | 120 nC | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 99 A | Surface Mount | 12.1 mOhm | N-Channel | MOSFET (Metal Oxide) | 5270 pF | D2PAK | 375 W | 10 V | |
Infineon Technologies | 20 V | 150 V | 5 V | -55 °C | 175 ░C | 110 nC | D2PAK TO-263-7 | 105 A | Surface Mount | 11.8 mOhm | N-Channel | MOSFET (Metal Oxide) | 5320 pF | D2PAK (7-Lead) | 10 V | 380 W |