SI4931 Series

Catalog

MOSFET 2P-CH 12V 6.7A 8SOIC

Part	Power - Max	Channel Count	Configuration	Configuration - Features	Rds On (Max)	Gate Charge (Max)	Mounting Type	Technology	Package Length	Package Name	Package Width	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id)
Vishay Dale SI4931DY-T1-GE3	1.1 W	2	P-Channel	Dual	18 mOhm	52 nC	Surface Mount	MOSFET (Metal Oxide)	0.154 in	8-SOIC	3.9 mm	1 V	-55 °C	150 °C	Logic Level Gate	12 V	6.7 A
Vishay Dale SI4931DY-T1-E3	1.1 W	2	P-Channel	Dual	18 mOhm	52 nC	Surface Mount	MOSFET (Metal Oxide)	0.154 in	8-SOIC	3.9 mm	1 V	-55 °C	150 °C	Logic Level Gate	12 V	6.7 A