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20 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, N-channel Trench MOSFET
20 V, N-channel Trench MOSFET
| Part | Technology | Package Name | Drain to Source Voltage (Vdss) | Rds On (Max) | Current - Continuous Drain (Id) (Ta) | Power Dissipation (Max) | FET Type | Operating Temperature (Min) | Operating Temperature (Max) | Vgs (Max) | Package / Case | Mounting Type | Input Capacitance (Ciss) (Max) | Vgs(th) (Max) | Gate Charge (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | MOSFET (Metal Oxide) | TO-236AB | 20 V | 32 mOhm | 4.2 A | 5 W 490 mW | N-Channel | -55 °C | 150 °C | 12 V | SC-59 SOT-23-3 TO-236-3 | Surface Mount | 655 pF | 900 mV | 11 nC |