STW6N95 Series

N-channel 950 V, 1 Ohm typ., 9 A MDmesh K5 Power MOSFET in a TO-247 package

Catalog

N-channel 950 V, 1 Ohm typ., 9 A MDmesh K5 Power MOSFET in a TO-247 package

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Technology
STMicroelectronics STW6N95K5	10 V	90 W	N-Channel	950 V	Through Hole	13 nC	30 V	TO-247-3	TO-247-3	450 pF	1.25 Ohm	9 A	5 V	-55 °C	150 °C	MOSFET (Metal Oxide)

Catalog

N-channel 950 V, 1 Ohm typ., 9 A MDmesh K5 Power MOSFET in a TO-247 package

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.