MOSFET, N-CH, 60V, 120A, TO-263
| Part | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Vgs (Max) | Mounting Type | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 230 W | 120 nC | MOSFET (Metal Oxide) | 10 V | D2PAK | N-Channel | -55 °C | 175 ░C | 4.2 mOhm | 20 V | Surface Mount | 60 V | 4 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 4520 pF | 120 A |