Beta
⌘K
IR MOSFET™ N-CHANNEL POWER MOSFET ; PQFN 3.3 X 3.3 PACKAGE; 115 MOHM;
| Part | Technology | Rds On (Max) @ Id, Vgs | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Vgs (Max) | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET (Metal Oxide) | 115 mOhm | N-Channel | 26 nC | 4 V | 10 V | Surface Mount | 8-PowerTDFN | 760 pF | -55 °C | 150 °C | 8-PQFN (3x3) | 20 V | 2.8 W 29 W | 3.2 A 20 A | 100 V |