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20V P-Channel Enhancement Mode MOSFET
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20V P-Channel Enhancement Mode MOSFET
20V P-Channel Enhancement Mode MOSFET
| Part | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Package / Case | FET Type | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 1.4 V | -55 °C | 150 °C | 2.3 W | 1.9 mOhm | MOSFET (Metal Oxide) | 20 V | 60 A | 12 V | 585 nC | 10 V | 2.5 V | 12826 pF | PowerDI5060-8 (Type K) | 8-PowerTDFN | P-Channel | Surface Mount |