PMPB15 Series

12 V, single P-channel Trench MOSFET

Catalog

12 V, single P-channel Trench MOSFET

Part	Current - Continuous Drain (Id) (Ta)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case	Vgs(th) (Max)	Technology	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Package Name	Vgs (Max)	Rds On (Max)	Qualification	Grade	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
Nexperia USA Inc. PMPB15ENEX	11 A	10 V	Surface Mount	6-UDFN Exposed Pad	2.5 V	MOSFET (Metal Oxide)	1.6 W	-55 °C	150 °C	30 V	N-Channel	14 nC	440 pF	DFN2020MD-6	20 V	22 mOhm
Nexperia USA Inc. PMPB15XPAX	8.2 A		Surface Mount	6-UDFN Exposed Pad	1 V	MOSFET (Metal Oxide)	1.7 W 12.5 W	-55 °C	150 °C	12 V	P-Channel	100 nC	2875 pF	DFN2020MD-6	12 V	20 mOhm	AEC-Q101	Automotive	4.5 V	1.8 V
Nexperia USA Inc. PMPB15XPZ	8.2 A		Surface Mount	6-UDFN Exposed Pad	900 mV	MOSFET (Metal Oxide)	1.7 W 12.5 W	-55 °C	150 °C	12 V	P-Channel	100 nC	2875 pF	DFN2020MD-6	12 V	19 mOhm			4.5 V	1.8 V
Nexperia USA Inc. PMPB15XPH	8.2 A		Surface Mount	6-UDFN Exposed Pad	900 mV	MOSFET (Metal Oxide)	1.7 W 12.5 W	-55 °C	150 °C	12 V	P-Channel	100 nC	2875 pF	DFN2020MD-6	12 V	19 mOhm			4.5 V	1.8 V
Nexperia USA Inc. PMPB15XP,115	8.2 A		Surface Mount	6-UDFN Exposed Pad	900 mV	MOSFET (Metal Oxide)	1.7 W 12.5 W	-55 °C	150 °C	12 V	P-Channel	100 nC	2875 pF	DFN2020MD-6	12 V	19 mOhm			4.5 V	1.8 V

Catalog

12 V, single P-channel Trench MOSFET

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.